STMicroelectronics’ EVSTDRVG611MC gallium-nitride (GaN) motor-control reference design for appliances and industrial drives handles more than 600W without a heatsink, ensuring a compact outline and ...

A rugged surface-mount solution brings high-frequency noise suppression and reliability to next-gen aerospace and defence power systems.

Ugreen's GaN-based power station packs a lot of juice inside a compact body with multiple USB ports and an Apple-certified adjustable MagSafe puck. In a world filled with niche chargers, it's hard for ...

Rohm has decided to combine its own development and manufacturing technologies for GaN power devices with TSMC’s process ...

onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and manufacture next-generation gallium nitride (GaN) power devices, ...

I give Navitas Semiconductor a Strong Buy rating for its strategic pivot to high-power, high-margin markets like AI data centers and industrial electrification. NVTS’s unique GaN and SiC technology ...

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

Why using GaN allows for more compact power supplies. How Navitas is shrinking the size of power supplies across the board. 1. GaN is already showing up in mobile chargers that are significantly ...

Manufacturers of silicon carbide (SiC) and gallium nitride (GaN) power ICs leveraged the APEC 2024 conference to highlight their latest developments in wide-bandgap semiconductors. These devices offer ...

How to improve power-converter density and efficiency using GaN HEMT in a half-bridge configuration. What’s the difference between Direct-Drive GaN and cascoded D-mode GaN designs? Savvy power design ...

The collaboration merges ROHM’s device development expertise with TSMC’s advanced GaN-on-silicon technology. Credit: ROHM/Globenewswire. ROHM has entered a strategic partnership with Taiwan ...